Abstract
The moments associated with the peak region were evaluated with the extended Lindhard-Scharff-Schiott (LSS) theory. The theory was further extended to that for moments of profiles in crystalline substrates. The channeling length was related to the maximum range that is associated with electron stopping power only. The shape of the channeling tail and the channeling dose were expressed in an empirical way but with a universal form. The theory was successfully applied to the profiles in Si1-xGex substrates.
Keywords: Ion implantation, LSS theory, channeling, SiGe, damage, crystalline substrates, tail function, electron stopping power, nuclear stopping power, maximum range, SIMS, channel dose, dose, lateral distribution, MOSFETs.
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