Abstract
This chapter summarizes the progress of InAs submonolayer (SML)
quantum dot (QD) based intermediate band solar cell (IBSC). A brief background of
intermediate band solar cells (IBSC) will be presented. Different IBSC prototypes will
be discussed. The importance of quantum dots (QDs) for IBSC prototyping will be
illustrated. An alternative of the most extensively used Stranski-Krastanow (SK)-QDs
named SML QDs will be introduced. The fabrication of SML-QD-based IBSC will be
discussed from the material point of view. We will also discuss the physics behind the
improved performance of these SCs. Important research in this field will be reviewed.
Finally, the future direction will be suggested to further improve the performance.
Keywords: Efficiency, Intermediate band solar cell (IBSC), InAs, Quantum well, Quantum dot (QD), Solar cell, Sub-monolayer (SML), SK-QD, SML-QD, III-V semiconductors.
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